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- QL78M8S-A/B/C
QL78M8S-A/B/C
Laser Diode by Quantum Semiconductor International
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The QL78M8S-A/B/C from Quantum Semiconductor International is a Laser Diode with Wavelength 770 to 790 nm, Output Power 90 mW, Output Power 90 mW, Operating Voltage 2 to 2.5 V, Operating Current 120 to 160 mA. More details for QL78M8S-A/B/C can be seen below.
Product Specifications
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Part Number QL78M8S-A/B/C Manufacturer Quantum Semiconductor International Description MOCVD grown 780 nm band AlGaAs laser diode with quantum well structure Application Industrial optical module, Sensor Configuration Single-Emitter Technology Quantum Well Operation Mode CW Laser Wavelength 770 to 790 nm Output Power 90 mW Output Power 90 mW Operating Voltage 2 to 2.5 V Operating Current 120 to 160 mA Operating Current 120 to 160 mA Reverse Voltage LD Reverse Voltage: 2 V Reverse Voltage(PD) 30 V Threshold Current : 30 to 50 mA Monitor Current 0.1 to 0.8 mA Laser Gain Medium AlGaAs Lasers Beam Divergence Parallel 7 to 13 Degree Beam Divergence Perpendicular 14 to 20 Degree Laser Color Infrared Operating Current (CW) 120 to 160 mA Package Type TO-Can Package TO-18 (5.6 mmf) Type Free Space Laser Diode Output Power (CW) 90 mW Note Beam Angle Parallel: ±2 Degree, Beam Angle Parpendicular: ±3 Degree, Optical Distance: ±60 µm Dimension 5.6 mm Operating Temperature -10 to 60 °C Storage Temperature -40 to 85 °C DatasheetProduct Details
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